ZnO based hydrogen Sensors

The direct gap of the semiconductor is the ZnO, by the band gap of the Ca 3.37ev. There are three structure available in the ZnO like rocksalt, zinc blende as well as wurrzite. The most common structures is the wurrzite because it has the lowest ground state of energy. In the process of the Nobel gasses there are different methods has been used to improve the sensing properties of the ZnO. The thickness of the ZnO films is about the 10 . Then the response of the  increase by the doping concentration along with the operating temperature which is very sensitivity and high. During the fabrications process the unique step is the heat treated under the 600  of Ar. Form the traditional noble gasses, the doping of the metal, is used the two different noble metals for the bimetallic where the doping is improved the sensing properties of the new method.

The transition of the metal oxide is the  along with the latticestructures which is the  and it is similar to the perovskite. The semiconductors, has the wide band gap, where its width of the band gap is around about 2.5-2.8ev.

The most widely and most used semiconductors , that isalso extensively used in the photocatalytic for the dye-sensitized of the solar cells along with the gas sensors. There are three crystals of structures is available for the  like the rutile,anatase, as well as brookites. Then its configuration for these three structure is the octahedral. Then improve the sensitivity under the room temperature that is the imperative to determine the methods which separate the electron hole pairs effectively (Luo and et al).