Find the activation energy and diffusion factor for each of the elements.

Diffusion coefficient = lnD ;

R= Constant

T take as inverse temperature

a)      Diffusion time

Ion dose by Gaussian distribution 

a)      The dopants can be introduced in the specified regions of silicon substrate and the diffusion takes place for the high temperature process. The penetration of the silicon is measured and at higher temperature the dopant atoms can alter the penetration depth of the wafer surface

      Question No: 3

Required vacuum

a)      New pressure if aluminum evaporated

         Question No: 4

             Question No: 5

a)      For reverse bias

      Question No: 6

The static dielectric constant of water is 78 at room temperature. it decreases to 20 at f = 40 GHz. If the optical high frequency dielectric constant is 5 what is the relaxation time of water

T    The classical theory of Debye for the single mechanism is  and the Debye equation becomes 

Attenuation constant

Question No: 7

A 8 mm inner diameter copper coax cable is carrying a voltage of 50 k V. The dielectric has a thermal conductivity of 0.2 M/m K and is 5 mm thick. It has a dielectric strength that varies linearly from 60 M V/m at -50 C to 10 M V/m at 150 C. at what DC current will the cable fail if the outside shield temperature is 300 K  

The magnetic susceptibility of the material is higher therefore the material contents provides higher magnetic contribution. The isolated properties are related to the measured influence for the magnetic phases in the material.

A.    Energy absorbed per cycle

The cycle is revised from initial point to the final point therefore the work done in the cycle becomes zero. The estimated energy absorbed in the cycle becomes smaller as energy is work done per unit area.

B.     Temperature of inductor