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What are the possible doping element for this wafer?

Category: Physics Paper Type: Assignment Writing Reference: APA Words: 1500

The Silicon Wafer has been doped; the n-type by the, where the As atoms in. The doping elements are the n-type extrinsic which is produced through the Silicone bye the n-type of the group VA, form examples the possible elements is As, P and Sb. The p-type SiC wafer is implanted by the donors to convert the region of n-type implanted. The conditions of the Si crystal Wafers in the microelectronics is normally controlled through the surface of etching as well as oxidizing at the high temperature.

What   is the    doping concentration?

The field penetrates into the semiconductors through the amount which depends the doping concentration. By the irradiations for an acceptors as well as donors which is generated by the bulk amount, this effect leads the bulk amount of effective dipping concentration.





The column is illuminated with HeNe laser perpendicular to the 2 micron dimension. It has an optical power of 3mW and a uniform circular spot size 1mm in diameter. 

                                      

Question 2

Diffusion

          

Find the activation energy and diffusion factor for each of the elements.

                                    


How long does it take each of elements to diffuse through a 500 micron thick wafer at 100 ?


  Consequence of Semiconductor industry

Semiconductors are the brain of the modern electronics’; in the economics growth. In the advance communications the Semiconductors is computing’s, health care, transportations, for the clean energy in the different applications. For the specified regions of the silicon’s the substrates as well as the diffusion takes place the high temperature. The silicone penetrations is calculated plus the temperature which is very high are the dopants atoms is the alter of the penetrations of water surface.  

Question 3 (Ideal Gas Law)

Volume = 1cubnic meter

Temperatures = 25cm= 0.25m

r= 0.1nm= 0.1

Vacuums path required?

Question 6

Static Dielectric constant of water:

The static dielectric constant of water is 78 at room temperature. It decreases to 20 at f = 40 GHz. If the optical high frequency dielectric constant is 5 what is the relaxation time of water



Cole-Cole plot

The classical theory of Debye for the single mechanism is  and the Debye equation becomes

Inner conductor temperature 


Question 8(a).

As according to the given data

Number of turns=12

Current=10A

Magnetic field=?

If the cross sectional area = 0.2 and the number of turns is 96 than we have to find the inductance.

L=?

We know that

So, we have to tell that the material as magnetically soft or hard. Higher magnetic contribution is provided by the material so the susceptibility is higher.

Answer8 (d)

We have to calculate the energy absorbed per cycle. As the absorbed energy is very small just equal to the zero. As we know the condition that is given in the question that when the magnet is saturated the current in the coil is increased, to the same negative value reversed after that it returned to Zero.

Answer 8 (E)


 

 


 

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