Report on IV and CV graph using data units

Introduction of IV and CV graph using data units

For the metal semiconductor, the Schottky diode is the common name, and it is work function among the metal and the semiconductor, which also calculates that the junction is rectifying or ohmic. Schottky diodes are useful in electronic devices due to its stability [1]. The focus of the lab experiment is on the fabrication of the Schottky diode along with the characteristics which they posses. The Schottky diode is rectifying like a current, which can flow only in one direction. It also has lower power losses and high frequencies, which create them ideal for different applications. For power application the Schottky diode has been long attractive through virtue of the reduced power loss in the forward conduction. The Schottky diodes are the mostly carrier devices which is exhibit the recertifying characteristics plus it also has low on the state voltage. On the top of n-type which is also known as the epitaxial layer Schottky barrier is formed.  By using the drift equation and the poisson equation the IV characteristics of the Schottky diode are formed. The bulk semiconductor potential variations are near to metal semiconductor contact and are estimated by current as the function of bias by Schottky diode [2].

Figure1. Structure of n-type silicon Scotty diode [3]

The Schottky diode is also known as the hot carrier’s diode and it is the semiconductor by the very fast switching actions which is also has the low forward voltage drop. By the Schottky diode when current flows there is the small voltage drops, which across the terminals of the diode. The ranges of the voltage drop in the Schottky diode between 0.15 and 0.45 volts but in the normal diode the voltage drop is 0.6 to 1.7 volts. If the voltage drop is lower it provide the higher switching speed by the better system of efficacy, but in the Schottky diode the metal junction of the semiconductor is formed among the metal of semiconductor as well as the metal is creating the Schottky driver. The semiconductor which has the N-type cathode it affects the metal side like the anode of the diode.

 Aims and Objectives of IV and CV graph using data units

· In this lab experiment, the objective of lab is to obtain the IV characteristic curve of Schottky diode

· The next objective of the lab is to obtain the CV characteristic curve of Schottky diode

· Elaborate the Fabrication of Schottky diode

Experimental section / fabrication of Schottky diodes  

By using the research grade of 4H-SiC as well as 6H-SiC samples, the Schottky diode was fabricated. There is a little number of combinations by the slightly doped of C face and Si face that were tried. Due to the high electron mobility the 4H polytype is dominant, and the nitrogen is also dopant for the substrates. The Schottky diode is the great commercial interest that is used for the different applications. For the high temperature and the high power the SiC Schottky diode is used, and it is also potentially significant for commercial devices. To explore the devices characteristics the Al- Schottky diode has the lateral and vertical contacts that are designed. Fabrication of Schottky diode in the research grade, n-type. Surface cleaned and the slightly opened n-type semi conducting was tested [4]. In the standard CMOS the fabrication of Schottky diode adding the additional CMOS process. The design of the Schottky diode is fabricated by the Multi project Wafer which is chartered 0.35 CMOS process [5]. When the metal layer is deposited the Schottky diode is formed on the low doped p-type or n-type semiconductor region. The cross section of the Al Schottky diode is shown in the below figure 2.

Figure 2: cross section of Al-Si Schottky

Source:  [6]

There are the following details steps for the fabrication of the Schottky diode is given below;

 By hot probe method, testing the type of dopant

 Chemical Polishing or Etching

   Wafer cleaning

  Metallization

   Photolithography

   Device-separation

  Lead contact [7]

When the Schottky barrier is reverse biased then it causes the barrier energy that is also increase and preventing the flow of electrons across the devices. The Schottky barrier is the forward biased due to the barrier of energy which is also decreased the allowing current to flow across the devices. In the lab for taking the CV measurements the Schottky barrier is characterize the threshold for the voltage or the inversion layers, when the gate voltages of applied to the structure of gate. The fabrication of the Schottky diodes which is based on the polymers of the semiconducting, and in this communication the characterization of the Schottky diode which is based on the composites.  By the thin film of the aluminium on the back side of the wafer along with copper which has different circles on front sides of the wafer by masked of oxide along with contact of the oxide.  The IV characteristics were used to extract the electrical parameters, which include barrier height, ideality factor, and saturation current.

References of  IV and CV graph using data units