) With the aid of a diagram, explair the formation of the depletion region in a P-n junction diode in thermal equilibrium. State the equilibrium condition for the currents flowing across the junction. Draw the band diagram of a forward biased p-n junction diode. On the diagram sketch the variation of the conduction band edge energy Ec and the valence band edge energy Ey. Sketch the variation of the electric field and potential across the p-n junction. State the changes in the width, energy band slope and voltage drop depletion region compared to a p-n junction in thermal equilibrium. across the b) Explain the mechanism injection electroluminescence? What type of semiconductor produces very efficient devices based on injection electroluminescence? Give an example of one such device. c) A forward biased GaP diode is connected in series with a 1 kn resister. The e.m.f in the circuit is 10 V. Assuming that the built-in voltage of the GaP diode is 2 V, (i) calculate the current flowing in the circuit. (ii) determine the band-gap energy of GaP given that the diode emits light at 562 nm. (iii) calculate the optical power emitted by the diode assuming 20 % recombination efficiency and current flow due to electrons.